Strain build-up in SiC implanted at different temperatures

Single crystals of 4H-SiC were implanted with helium ions at temperatures of 400 and 700 °C in a large range of fluences. The damage accumulation versus fluence was studied through the tensile elastic strain determined by using X-ray diffraction measurements. Results were analyzed via the multi-step damage accumulation model. At low dose (step 1) the strain can be described assuming a thermally activated process with low activation energy. Damage cross-sections, independent of implantation temperature, for interstitial-type defects were determined. With increasing dose, the contribution of other defects arises leading to an accelerated strain build-up namely the second step of the disordering process. However, in this regime, the strain cannot be fully described due to others operative mechanisms such as the formation of tiny bubbles under severe conditions of implantation. The formation of bubbles accelerates the development of the elastic strain. The values of damage cross-sections show that only small clusters contribute to the tensile elastic strain.