Interaction of fast hydrogen ions with silicon surface at glancing angles of incidence

Angular distributions of 380 keV protons reflected from (1 1 1) surface of Si monocrystal were measured in the range of projectiles glancing angle from 0.3° up to 0.8°. It is shown that increase of glancing angle causes non-linear change of such distribution parameters as angular width of the front rise, angular width of the distribution, the maximum yield value. Registered energy spectrum of reflected particles for glancing angle of 0.5° consists of several peaks with practically constant angular intervals between them and maxima weakly reducing towards lower energy region. It is experimentally shown that the most energetic peak relates to the reflection from the very surface and the rest ones are caused by successive scattering of ions by inner silicon crystallographic planes.