کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686649 | 1010608 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of platelet formation in hydrogen and helium-implanted silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A comparative transmission electron microscopy study of the extended defects formed in (0 0 1) Si after hydrogen or helium implantation was performed. Quantitative data on the size and density of the defects with different crystallographic variants have been obtained. Common defects observed after implants with a dose of 1 × 1016 cm−2 and isothermal anneals at 350 °C in the presence of a stiffener were platelet-like structures lying on {1 0 0} habit planes parallel and perpendicular to the wafer surface. The differences in the defect morphology and in the variant platelet population are correspondingly related to the different chemical reactivity of H and He and the different compressive biaxial stresses generated by the H and He implants.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 262, Issue 1, August 2007, Pages 24–28
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 262, Issue 1, August 2007, Pages 24–28
نویسندگان
X. Hebras, P. Nguyen, K.K. Bourdelle, F. Letertre, N. Cherkashin, A. Claverie,