کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1688206 1518946 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Development and test of 2.45 GHz microwave ion source based intense ion beam experimental facility
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Development and test of 2.45 GHz microwave ion source based intense ion beam experimental facility
چکیده انگلیسی


• An intense, low energy ion beam facility at IUAC.
• Consists of microwave ion source, multi-electrode extraction system and experimental chamber.
• Used for ion implantation.
• Samples characterized by RBS, RBS-C and NRA.

An intense low energy ion beam facility has been designed, developed at Inter University Accelerator Centre (IUAC), New Delhi. This facility comprises of a 2.45 GHz microwave ion source, multi-electrode extraction system and an experimental chamber. The facility was designed to perform experiments using intense ion beams having energy in range of a few keV to a few tens of keV. The plasma chamber was designed keeping two additional ports for plasma diagnostics. In order to deliver intense ion beams on the target with low electric field, a four-electrode extraction system has been developed. This facility has been used for 10 keV N+ & O+ ion implantation in silicon at varying doses. The implanted samples have been characterized by using Rutherford Back Scattering (RBS), RBS Channeling (RBS-C) and Nuclear Resonance Analysis (NRA).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 124, February 2016, Pages 55–59
نویسندگان
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