کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1690366 | 1518980 | 2013 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Atomic diffusion and interface reaction of Cu/Si (111) films prepared by ionized cluster beam deposition Atomic diffusion and interface reaction of Cu/Si (111) films prepared by ionized cluster beam deposition](/preview/png/1690366.png)
Cu thin films were deposited on P type Si (111) substrates by ionized cluster beams at different acceleration voltage. The interface reaction and atomic diffusion of Cu/Si (111) system were studied at different annealing temperatures by X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Some significant results were obtained. For the Cu/Si (111) samples prepared by ionized cluster beams at Va = 1 and 3 kV, the interdiffusion of Cu and Si atoms occurs in the as deposited samples. For the Cu/Si (111) samples prepared by ionized cluster beams at Va = 5 kV, the interdiffusion of Cu and Si atoms occurs when annealed at 450 °C. The formation of the copper silicides phase was observed by XRD in all the samples annealed at 450 °C and 600 °C.
Journal: Vacuum - Volume 89, March 2013, Pages 105–108