Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry

• The carrier lifetimes of implanted silicon samples were determined with a PTR method.
• The change of carrier lifetimes for O6+ implanted n type silicon was not observed.
• The change of carrier lifetimes for Ar8+ implanted p type silicon was not observed.
• The change of surface recombination velocities was observed in both type the samples.
• The simplified model of a PTR signal is presented and discussed.

This paper presents the influence of Ar8+ and O6+ ion implantation on the recombination parameters of n and p type Si samples. These parameters were determined from the fitting of theoretical characteristics to the experimental photothermal radiometric (PTR) characteristics. We found that with the increasing ion implantation doses (i) the changes of the bulk recombination lifetimes and the carrier diffusivity were not observed; (ii) the increasing of the surface recombination velocities and the parameter A were observed. This paper also proves that it is possible to interpret the experimental PTR characteristics with a relatively simple effective model of a PTR signal.