Improvement of the thermal design in the SiC PVT growth process

The physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown.

► For the first time, a field-coordination theory is involved to optimize the SiC PVT growth system.
► In this paper, the improvement is achieved by inserting a graphite insulation above the power source.
► The yield of crystal can be increased by improving the shape of the crystal growth interface.