کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793111 | 1524479 | 2019 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaNAs layers were grown on 3 μm-thick GaN epilayers with tertiarybutylarsine (TBA) for As incorporation. It was found that surface of even 2 nm-thick GaNAs was already granular on step-flow pattern of GaN template, which means that GaNAs growth mode was three-dimensional from the beginning. As incorporation in GaN was mainly determined by NH3 decomposition and As desorption. NH3 decomposition was dominant process to suppress incorporation of As adatoms on N-sites of GaNAs in case of low growth temperature and high As concentration over â¼5Ã1019 cmâ3. On the other hand, As desorption became more critical to limit As incorporation in case of high growth temperature and low As concentration below â¼5Ã1019 cmâ3. In this case, As adatoms were incorporated on Ga-sites of GaNAs and As double donor-related emission were observed from 900 °C GaNAs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issues 12â13, 1 June 2010, Pages 2019-2024
Journal: Journal of Crystal Growth - Volume 312, Issues 12â13, 1 June 2010, Pages 2019-2024
نویسندگان
Hyunseok Na,