Reduction of switching time in pentalayer nanopillar device with different biasing configurations

• Current induced magnetization switching in a pentalayer nanopillar is studied.
• Pinned layer and free layer biasing increase the magnetization switching speed.
• Fastest magnetization switching is achieved for free layer biasing configuration.

The spin transfer torque assisted magnetization switching in a pentalayer nanopillar device is theoretically studied for different biasing configurations. The magnetization switching time is calculated for three different configurations (standard(no biasing), pinned layer biasing and free layer biasing), by numerically solving the governing dynamical Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation. The corresponding switching time for an applied current density of 3×1011Am−2 is about 0.296 ns, 0.195 ns, and 0.108 ns respectively. Pinned layer biasing and free layer biasing increase the magnetization switching speed significantly. Reduction of switching time in the pinned layer biasing is due to the enhancement of spin transfer torque, whereas in the free layer biasing it is due to an additional magnetic torque which arises due to an applied magnetic field. The fastest magnetization switching is achieved for the free layer biasing configuration.