Magnetic anisotropy control in Ga1−xMnxAsGa1−xMnxAs magnetic semiconductors

• Six-band Kane model was used to calculate valence band structure of (Ga,Mn)As.
• Considered constraints: constant hole concentration, constant chemical potential.
• Variations of the total energy of electron as a dependence on direction of magnetization.

Using the six-band Kane model of the electron energy spectrum in the valence band of GaMnAs magnetic semiconductor we investigate the dependence of the crystalline magnetic anisotropy on the magnitude of magnetization and on the doping with holes. Our main focus is on the difference between two possible models related to the constraint on the total hole number or on the chemical potential. Our results show that the theoretical results for magnetic anisotropy can change dramatically with the use of different constraints.