Phase tailored, potentiodynamically grown p-Cu2−xTe/Cu layers

In this work we successfully prepared p-type semiconducting Cu2−xTe layers on Cu substrates by applying a potential multistep signal. Spontaneously deposited tellurium layers were reduced in a single cathodic sweep. The X-ray diffraction characterization showed the presence of single-phased, crystalline Cu2−xTe in the weissite form. A further anodization step allows crystallization of several phases such as Cu1.75Te, Cu0.664Te0.336 and Cu7Te4. This type of sample was found to be photoactive. The prepared films are p-type and have carrier concentrations in the order of 1021 cm−3, suitable for CdTe-Cu2−xTe contacts.