کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1829987 1027469 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Type conversion of polycrystalline CdZnTe thick films by multiple compensation
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
Type conversion of polycrystalline CdZnTe thick films by multiple compensation
چکیده انگلیسی

The multiple compensated polycrystalline CdZnTe thick films have been deposited by thermal evaporation method. The heavy metals of Pb and Sn have been co-doped with Cl in order to fully compensate Cd vacancies in polycrystalline CdZnTe films due to the limited solubility of Cl in CdZnTe. The drastic variations of the resistivity and conduction type in the CdZnTe films were observed by doping with heavy metals. The intensity of A-center levels, which are normally found in a compensated single CdZnTe crystal, was decreased along with the increase of resistivity in polycrystalline CdZnTe samples. The electron mobility is about 88cm2/Vs, and a well resolved gamma ray spectrum of Am241 has been observed for these polycrystalline CdZnTe thick films for the first time.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 584, Issue 1, 1 January 2008, Pages 191–195
نویسندگان
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