کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1860900 | 1530561 | 2015 | 7 صفحه PDF | دانلود رایگان |
• The Rashba SOI induced by internal SIA of asymmetric QWs is investigated.
• The mechanism of the strength increasing of Rashba SOI is analyzed.
• The optimal structure parameters of the asymmetric QWs are found out.
• The longest spin relaxation time can be reached by QWs structure design.
• Designing asymmetric QWs structure is an effective way to control electron SOI.
We designed two different kinds of asymmetric quantum wells and theoretically investigated the modulation of the Rashba spin–orbit interaction by varying the internal structure inversion asymmetry of these asymmetric quantum wells in the absence of electric and magnetic fields. Our goal is to increase the strength of the Rashba spin–orbit interaction by studying the mechanism of the strength increasing of Rashba spin–orbit interaction. Designing asymmetric quantum wells structure is an effective way to control electron spin–orbit interaction.
Journal: Physics Letters A - Volume 379, Issues 43–44, 6 November 2015, Pages 2853–2859