p-type doping of GaInNAs quaternary alloys

Using the first-principles band-structure method, we investigate the p  -type doping properties and band structural parameters of the random Ga1−xInxN1−yAsyGa1−xInxN1−yAsy quaternary alloys. We show that the MgGaMgGa substitution is a better choice than ZnGaZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing In composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices.