Prediction of betavoltaic battery output parameters based on SEM measurements and Monte Carlo simulation

• New procedure for betavoltaic battery output parameters prediction is described.
• A depth dependence of beta particle energy deposition for Si and SiC is calculated.
• Electron trajectories are assumed isotropic and uniformly started under simulation.

An approach for a prediction of 63Ni-based betavoltaic battery output parameters is described. It consists of multilayer Monte Carlo simulation to obtain the depth dependence of excess carrier generation rate inside the semiconductor converter, a determination of collection probability based on the electron beam induced current measurements, a calculation of current induced in the semiconductor converter by beta-radiation, and SEM measurements of output parameters using the calculated induced current value. Such approach allows to predict the betavoltaic battery parameters and optimize the converter design for any real semiconductor structure and any thickness and specific activity of beta-radiation source.