A comparative electrochemical study of iron deposition onto n- and p-type porous silicon prepared from lightly doped substrates

Electrodeposition of iron from acidic sulfate solutions onto porous silicon (PS) prepared from n- and p-type (1 0 0) substrates is studied by electrochemical measurements. Results from current–potential curves show that deposition of iron on p-type PS can only be achieved under illumination and cathodic polarization, whereas the deposition is found to proceed on n-type even in the dark. The measurements of the cathodic current efficiency indicate that the fraction of current used for iron deposition decreases with the applied potential due to hydrogen evolution reaction which is a competing reaction to metal deposition. Scanning electron microscopy shows that very fine iron crystallites with an average size of 40–70 nm are formed under double potential step conditions. The energy band diagrams of silicon-solution interfaces determined by electrochemical impedance measurements reveal that the iron deposition mechanism on both substrates is electron transfer from the conduction band.