کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
196748 | 459850 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bottom-up filling in Cu electroless deposition using bis-(3-sulfopropyl)-disulfide (SPS)
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
The effect of bis-(3-sulfopropyl)-disulfide (SPS) in Cu electroless deposition was investigated. Quartz crystal microbalance (QCM) was used to measure the current density in a complete electroless bath, and the accelerating and suppressing effect of SPS were confirmed according to its concentration. The highest acceleration effect appeared at 0.5 mg l−1 of SPS with 4.24 mA cm−2 of current density while the current density decreased to 0.485 mA cm−2 at 5.0 mg l−1 of SPS. From differences in the effect of SPS according to the concentration, Cu bottom-up filling was achieved using electroless deposition. The adsorbed sulfur compounds on the surface produced CuS, which acted as an impurity to cause an increase of the film resistivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 50, Issues 16–17, 30 May 2005, Pages 3563–3568
Journal: Electrochimica Acta - Volume 50, Issues 16–17, 30 May 2005, Pages 3563–3568
نویسندگان
Chang Hwa Lee, Sang Chul Lee, Jae Jeong Kim,