کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
219135 463250 2013 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of various terminal groups on long-term protective properties of aromatic SAMs on copper in acidic environment
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Effect of various terminal groups on long-term protective properties of aromatic SAMs on copper in acidic environment
چکیده انگلیسی

The effect of several p-substituent groups (–F, –CH3, –OH, –COOH, –NHCOCH3) on the performances and the stability of aromatic monolayers on copper has been studied. All the results agreed indicating that such aromatic films are very stable and effective as corrosion inhibitors even in harsh conditions (aerated H2SO4 0.5 M). Nevertheless, while XP spectroscopy showed an excellent chemical stability for all the layers regardless the terminal groups, EIS measurements highlighted notably different protective properties and durability for the various SAMs. Such passivation depends not only on the hydrophobicity of the terminal group but, surprisingly, also on the electronic effect of the substituent on the ring as well. In particular, molecules having an electron-withdrawing substituent showed good passivity at first, a steep increase of their protective properties following the exposure to the electrolyte but a relatively poor stability. The presence of an electron-donating substituent, on the other hand, led to relatively poor initial protection, a slow reorganization but an exceptionally long durability.


► Aromatic SAMs are very durable and effective copper corrosion inhibitors in H2SO4.
► Regardless the tail group, SAM passivation increases in contact with the electrolyte.
► Their long-term durability is tuned by electronic effects of the substituent group.
► Electron-donating substituents promote exceptionally long SAM durability.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electroanalytical Chemistry - Volume 693, 15 March 2013, Pages 86–94
نویسندگان
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