کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4971466 | 1450529 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Energetic deposition, measurement and simulation of graphitic contacts to 6H-SiC
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Junctions between energetically deposited graphitic carbon and n-type 6H-SiC have been fabricated. Their current-voltage characteristics have been measured and compared with simulations using Sentaurus TCAD finite element software. Agreement between the experimental and simulated current-voltage characteristics was achieved using parameters derived from electrical measurements and electron microscopy. Using the best-fit models, the effects of interfacial layers and contact work function variations were elucidated to provide guidance for improved device performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 71, April 2017, Pages 82-85
Journal: Microelectronics Reliability - Volume 71, April 2017, Pages 82-85
نویسندگان
Hiep Tran, Masturina Kracica, Dougal McCulloch, Edwin Mayes, Anthony Holland, James Partridge,