کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4985553 | 1454760 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
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چکیده انگلیسی
The thermal stability of Ge/Al2O3 and Ge/AlN/Al2O3 stacks has been systematically studied upon post deposition annealing (PDA) at 400, 500 and 600â¯Â°C with nitrogen gas flow. X-ray photoelectron spectroscopy (XPS) with the incident photon energy of 1486.7â¯eV and synchrotron radiation photoemission spectroscopy (SRPES) with the incident photon energy of 720, 500 and 200â¯eV have been used to characterize the interface chemistry and the diffusion of Ge-oxides. More aggressive “clean-up” effect takes place with a higher substrate temperature during the atomic layer deposition (ALD) process for the growth of Al2O3 and AlN thin films. A competitive process among the Ge-oxides growth at the Ge/high-k dielectrics interface, the Ge-oxides diffusion, and GeO desorption has been suggested upon PDA treatments. The effective suppression for formation of Ge-oxides by an ultrathin AlN layer has been observed for the samples before PDA and after PDA at 400â¯Â°C. Ge-oxide diffusion in proximity to the gate oxide surface has been characterized from the Ge2p3/2 spectra by XPS after PDA at 400â¯Â°C for Ge/Al2O3 and Ge/AlN/Al2O3 stacks. The diffusion mechanism is hypothesized by diffusion of oxygen vacancy. Moreover, a significant desorption of GeO occurs after PDA at 600â¯Â°C for the AlN passivated sample.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surfaces and Interfaces - Volume 9, December 2017, Pages 51-57
Journal: Surfaces and Interfaces - Volume 9, December 2017, Pages 51-57
نویسندگان
Zhu Yunna, Wang Xinglu, Liu Chen, Wang Tao, Chen Hongyan, Wang Wei-Hua, Cheng Yahui, Wang Weichao, Wang Jiaou, Wang Shengkai, Cho Kyeongjae, Liu Hui, Lu Hongliang, Dong Hong,