کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010185 | 1462196 | 2017 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design](/preview/png/5010185.png)
- A SGORSD-TFT without additional ion implantations and masks is discussed.
- This device can reduce device electric field, and suppress the kink effect.
- The SGORSD design can improve device reliability.
In this paper, a novel step gate-overlapped lightly doped drain (GOLDD) with raised source/drain (RSD) structure (SGORSD) is proposed for TFT electronic device application. The new SGORSD structure could obtain a low electric field at channel near the drain side owing to a step GOLDD design. Compared to the conventional device, the SGORSD TFT exhibits a better kink effect and higher breakdown performance due to the reduced drain electric field (D-EF). In addition, the leakage current also can be suppressed. Moreover, the device stability, such as the threshold voltage shift and drain current degradation under a high gate bias, is improved by the design of SGORSD structure. Therefore, this novel step GOLDD structure can be a promising design to be used in active-matrix flat panel electronics.
Journal: Solid-State Electronics - Volume 137, November 2017, Pages 10-15