کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010191 | 1462196 | 2017 | 4 صفحه PDF | دانلود رایگان |
- Clockwise hysteretic I-V is observed in a Ti/PS/ZnO nanorods/FTO device.
- The hysteretic I-V follows the SCLC conduction plus the Poole-Frenkel emission.
- A double-trap model is proposed to describe the clockwise hysteretic I-V behavior.
Hysteretic current-voltage (I-V) characteristics are quite common in metal-insulator-metal (MIM) devices used for resistive switching random access memory (RRAM). Two types of hysteretic I-V curves are usually observed, figure eight and counter figure eight (counter-clockwise and clockwise in the positive voltage sweep direction, respectively). In this work, a clockwise hysteretic I-V curve was found for an MIM device with polystyrene (PS)/ZnO nanorods stack as an insulator layer. Three distinct regions I â¼Â V, I â¼Â V2, and I â¼Â V0.6 are observed in the double logarithmic plot of the I-V curves, which cannot be explained completely with the conventional trap-controlled space-charge-limited-current (SCLC) model. A model based on the energy band with two separate traps plus local energy variation and trap-controlled SCLC has been developed, which can successfully describe the behavior of the clockwise hysteretic I-V characteristics obtained in this work.
Journal: Solid-State Electronics - Volume 137, November 2017, Pages 58-61