کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5397863 | 1505875 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Luminescence and carrier dynamics in nanostructured silicon
ترجمه فارسی عنوان
لومینسانس و دینامیک حامل در سیلیکون نانوساختار
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کلمات کلیدی
نانوساختارها، فوتولومینسانس زمان حل شده، دینامیک حامل،
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
چکیده انگلیسی
We report increased radiation in the visible and terahertz (THz) regimes in silicon(Si)-based nanostructures. The nanostructures, Si nanowires (SiNWs) and porous Si (PSi), were synthesized via electroless and electrochemical surface modification, respectively. In particular, picosecond (ps) radiative lifetimes in the order of 250Â ps were obtained from time-resolved photoluminescence (PL) measurements. The fast radiative lifetimes are associated with increased surface defect density in PSi. Reflectance measurements confirmed that optical absorption of the nanostructured Si samples increased relative to bulk Si. Both nanostructured Si exhibit THz emission, albeit weaker in PSi due to higher density of defects. An inverse relationship between PL and THz emission strength was therefore observed. Lastly, the wider bandwidth of the THz emission in SiNWs is attributed to the directionality of the transient photocurrent compared to the more disordered carrier transport in PSi.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 186, June 2017, Pages 312-317
Journal: Journal of Luminescence - Volume 186, June 2017, Pages 312-317
نویسندگان
Neil Irvin Cabello, Philippe Tingzon, Kerr Cervantes, Arven Cafe, Joybelle Lopez, Arvin Mabilangan, Alexander De Los Reyes, Lorenzo Jr., Joselito Muldera, Dinh Cong Nguyen, Xuan Tu Nguyen, Hong Minh Pham, Thanh Binh Nguyen, Arnel Salvador,