Study on the electroluminescence properties of the p-NiMgO:Li/MgO/n-ZnO nanowires/ITO heterojunction

We fabricated a p-NiMgO:Li/MgO/n-ZnO NWs/ITO heterojunction device and studied its electroluminescence characteristics. Emission from n-ZnO was observed under forward biases. Significantly the random lasing was achieved. Besides, to investigate the characteristics of NiMgO:Li material, we carried out a comparative study on NiMgO:Li and NiO:Li. The p-NiMgO:Li thin films were deposited on c-sapphire substrates by radio-frequency magnetron sputtering using high-purity NiO and MgO ceramic targets. Although, the hole concentration of NiMgO:Li thin film was low compared with the NiO:Li thin film, the electronic mobility and the optical transmittance have obviously improvements.