کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5400449 | 1505917 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved luminescence properties of pulsed laser deposited Y3(Al,Ga)5O12:Tb thin films by post deposition annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Y3(Al,Ga)5O12:Tb thin films were successfully deposited on Si (1 0 0) substrates in an oxygen working atmosphere by the pulsed laser deposition (PLD) technique. The as-deposited films were amorphous but crystallized when annealed in air at 400 °C and 800 °C for 1 h as confirmed by X-ray diffraction. Three dimensional atomic force microscopy (AFM) images of the as-deposited film show well defined spherically grains that were uniformly distributed over the surface with a root mean square (RMS) roughness value of 9 nm. After annealing at 800 °C the surface became smooth and the RMS value was reduced to 6 nm. The smooth layer was confirmed to be a surface oxide layer enriched with Ga from the images captured using a nano-scanning Auger electron microprobe (NanoSAM). The PL intensities were observed to increase as a function of annealing temperatures and this was attributed to improvement of the crystallinity of the films and a possible variation of Ga concentration in the thin films. In addition, cathodoluminescence (CL) properties of the films were recorded when the films were irradiated with a beam of electrons in the vacuum chamber of the Auger electron spectrometer. The CL intensity of the deposited film was recorded as a function of electron dose as well as the accelerating voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 143, November 2013, Pages 201-206
Journal: Journal of Luminescence - Volume 143, November 2013, Pages 201-206
نویسندگان
A. Yousif, H.C. Swart, O.M. Ntwaeaborwa,