کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5400479 | 1505917 | 2013 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, iono and thermoluminescence properties of heavy ion (100Â MeV Si7+) bombarded Zn2SiO4:Sm3+ nanophosphor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Structural, iono (IL) and thermoluminescence (TL) studies of Zn2SiO4:Sm3+ (1-5 mol%) nanophosphor bombarded with swift heavy ions in the fluence range 3.91Ã1012-21.48Ã1012 cmâ2 have been carried out. The average crystallite sizes for pristine and ion irradiated for 3.91Ã1012 ions cmâ2 and 21.48Ã1012 ions cmâ2 were found to be 34, 26 and 20 nm. With increase of ion fluence, the intensity of XRD peaks decreases and FWHM increases. The peak broadening indicates the stress induced point/clusters defects produced due to heavy ion irradiation. IL studies were carried out for different Sm3+ concentrations in Zn2SiO4 by irradiating with ion fluence of 15.62Ã1012 ions cmâ2. The characteristic emission peaks at â¼562, 599, 646 and 701 nm were recorded by exciting Si7+ ions in the fluence range 3.91Ã1012-21.48Ã1012 ions cmâ2. These peaks were attributed to 4G5/2â6H5/2 (562 nm), 4G5/2â6H7/2 (599 nm), 4G5/2â6H9/2 (646 nm), and 4G5/2â6H5/2 (701 nm) transitions of Sm3+ . The highest emission was recorded at 3 mol% of Sm3+ doped Zn2SiO4. TL studies were carried out for 3 mol% Sm3+ concentration in the fluence range 3.91Ã1012-21.48Ã1012 ions cmâ2. Two TL glow peaks at 152 and 223 °C were recorded. The kinetic parameters (E, b, and s), were estimated using Chen's peak shape method. Simple glow curve structure (223 °C), highly resistive, increase in TL intensity up to 19.53Ã1012 ions cmâ2, simple trap distribution makes Zn2SiO4:Sm3+ (3 mol%) phosphor highly useful in radiation dosimetry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 143, November 2013, Pages 409-417
Journal: Journal of Luminescence - Volume 143, November 2013, Pages 409-417
نویسندگان
D.V. Sunitha, H. Nagabhushana, S.C. Sharma, Fouran Singh, B.M. Nagabhushana, N. Dhananjaya, C. Shivakumara, R.P.S. Chakradhar,