Efficient, air-stable quantum dots light-emitting devices with MoO3 modifying the anode

In this work, we fabricated quantum dots light-emitting devices with hole-injection layer, molybdenum oxide (MoO3) substituting for poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) which is hygroscopic and acidic and, therefore, a source of interface instability. A significant enhancement in luminance and current efficiency in MoO3-containing devices was observed. In addition, MoO3-containing devices were more stable in the air than those with PEDOT:PSS as the hole injection layer. The hole injection and transport of the devices were studied by the J-V characteristics of the hole-only devices. The excellent performance of the devices was principally a result of MoO3 possessing lower injection barrier for the hole and better stability than PEDOT:PSS.