کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5400924 | 1392704 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Recent progress on light-emitting diode having a Eu-doped GaN active layer is reported. Although the first success on LED using GaN:Eu has been achieved by OMVPE, the factors to be controlled during the crystal growth are not well understood. We found that GaN:Eu co-doped with Mg in NH3-MBE shows a Eu site which is excited only by the above band-gap excitation. The luminescence intensity is enhanced at least 10 times than that without Mg co-doping. The LED operation fabricated using Mg co-doping technique is successfully demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 132, Issue 12, December 2012, Pages 3113-3117
Journal: Journal of Luminescence - Volume 132, Issue 12, December 2012, Pages 3113-3117
نویسندگان
Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada, Yasufumi Takagi,