Luminescence properties of InAs quantum dots formed by a modified self-assembled method

► InAs/GaAs quantum dots grown by indium (In) interruption growth technique have been studied. ► InAs QDs grown by In-interruption showed an improvement in the size distribution and shape of QDs. ► Size/shape and density of InAs QDs can be controlled by changing the In-interruption time. ► In-interruption technique can be used to grow coherent QDs with uniform size distribution.