Carrier localization effect on luminescence spectra of III-V heterostructures

► We present a steady-state rate-equation model for temperature-dependent luminescence spectra from localized-state material system. ► Temperature-dependent anti-S-shaped and S-shaped peak energy for InAs quantum-dot and InGaN-multi-quantum-well samples are demonstrated by the model. ► Calculation results by the model reveals heating effect is evident in MQW sample as the driving current injected is increasing.