Generation of optically active states in a-SiNx by thermal treatment

► SiNx-based luminescent materials (or luminescent SiNx-nanostructures) are formed by the conventional PECVD. ► Radiative recombination between N4+ and N2° defects results in strong PL at 710 nm. ► Radiative N4+ and N2° defects were localized in the optically active intermediate states (OAIS's), which are mainly composed of the lower Si coordination sates. ► OAIS is thermally meta-stable and chemically intermediate state. ► Thermal annealing leads to the increase in regions of the OAIS.