Hybrid cold and hot-wall reaction chamber for the rapid synthesis of uniform graphene

We introduce a novel modality in the CVD growth of graphene which combines cold-wall and hot-wall reaction chambers. This hybrid mode preserves the advantages of a cold-wall chamber such as fast growth and low power consumption, while boosting the quality of growth, similar now to conventional CVD with in hot-wall chambers. The synthesized graphene forms a uniform monolayer. Electronic transport measurements indicate significant improvement in charge carrier mobility compared to graphene synthesized in a cold-wall reaction chamber. Our results promise the development of a fast and cost-efficient growth of high quality graphene, suitable for scalable industrial applications.

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