کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5435638 | 1509353 | 2017 | 5 صفحه PDF | دانلود رایگان |
- The systematic conversion of chemically-synthesized p-type Te nanowires into their n-type forms is demonstrated.
- The air-stability of the n-type Te nanowires is dramatically improved.
- The reversible p-to-n polarity switching of Te nanowires is realized.
Chemically-synthesized semiconductor nanostructures have the potentials for the exploration of unprecedented electronic and thermoelectric properties. Such materials possess the surface area much larger than their bulk forms, resulting that surface chemical functionalization may alter electronic properties. Here we report on the modulation of majority carriers in semiconductor nanowires by the addition of organic salts. The p-type nanowires were successfully converted to n-type forms to which large cations such as onium ions and metal-crown ether complexes are coordinated.
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Journal: Synthetic Metals - Volume 225, March 2017, Pages 93-97