Effects of Mn doping on dielectric properties and energy-storage performance of Na0.5Bi0.5TiO3 thick films

Lead-free Na0.5Bi0.5Ti1−xMnxO3 (NBTMnx, x=0, 0.01, 0.03 and 0.05) ferroelectric thick films have been fabricated on LaNiO3/Si(100) substrate by using a polyvinylpyrrolidone-modified sol-gel method and the effects of Mn content on their microstructure, dielectric properties and energy-storage performance were investigated. Compared with the pure Na0.5Bi0.5TiO3 (NBT) thick films, NBTMnx thick films exhibited a large enhancement in dielectric properties and energy-storage performance. Particularly, a giant recoverable energy-storage density (W) of 30.2 J/cm3 and the corresponding efficiency (η) of 47.7% were obtained in NBTMn0.01 thick film at 2310 kV/cm. Moreover, the NBTMn0.01 thick film displayed good energy-storage stability over a large temperature range at different frequency.