Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor

Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 91, July 2017, Pages 166-172

J. Gao, G. He, D.Q. Xiao, S.S. Jiang, J.G. Lv, C. Cheng, Z.Q. Sun,