Heavy-ion irradiation study in SOI-based and bulk-based junctionless FinFETs using 3D-TCAD simulation

• SOI and bulk-based junctionless FinFETs subjected to heavy–ion irradiation are scrutinized using 3D-TCAD simulation.
• Soft error performances of the SRAM cells based on the above devices are also explored.
• At the device level, SOI junctionless devices have higher bipolar amplification than the bulk junctionless devices.
• At the circuit level, SOI junctionless devices show better soft error performance in 6T-SRAMs.

In this paper, SOI-based and bulk-based junctionless FinFETs subjected to heavy–ion irradiation are scrutinized using 3D-TCAD simulation. Since the junctionless devices need heavy doping concentrations, devices with various fin dopings are studied for their radiation performance. Transient drain current device simulations depict higher disturbances in bulk devices. Bipolar amplification is higher in SOI devices. The soft error performances of the SRAM cells based on the above devices are also explored. Even though the SOI devices have higher bipolar amplification than the bulk device, they show better soft error performance in SRAMs.