کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5450572 | 1513060 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of the electronic properties of all-electroplated ZnS, CdS and CdTe graded bandgap photovoltaic device configuration
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
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چکیده انگلیسی
All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (Ïb) >0.82â¯eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc) of 34.08â¯mAâ¯cmâ2, open-circuit voltage (Voc) of 730â¯mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND) of 7.79 Ã 1014â¯cmâ3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 158, December 2017, Pages 721-727
Journal: Solar Energy - Volume 158, December 2017, Pages 721-727
نویسندگان
A.A. Ojo, I.M. Dharmadasa,