کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545070 | 871806 | 2012 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dynamic avalanche in bipolar power devices
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In bipolar power devices, remaining plasma is extracted during turn-off. In high-voltage devices, even at moderate conditions dynamic avalanche caused by the free carriers appears. Strong dynamic avalanche leads to filament formation. The effect must not be destructive as long as the filaments can move. Effects which are common in the bipolar devices GTO, GCT, IGBT and power diode are investigated, and specific effects of each device are considered. In every case, the decisive effects for dynamic avalanche sustainability happen at the junction opposite to the blocking pn-junction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issue 3, March 2012, Pages 475–481
Journal: Microelectronics Reliability - Volume 52, Issue 3, March 2012, Pages 475–481
نویسندگان
Josef Lutz, Roman Baburske,