کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545077 | 871806 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The only way to keep pace with Moore’s Law is to use probabilistic computing for memory design. Probabilistic computing is ‘unavoidable’, especially when scaled memory dimensions go down to the levels where variability takes over. In order to print features below 20 nm, novel lithographies such as Extreme Ultra Violet (EUV) are required. However, transistor structures and memory arrays are strongly affected by pattern roughness caused by the randomness of such lithography, leading to variability induced data errors in the memory read-out. This paper demonstrates a probabilistic–holistic look at how to handle bit errors of NAND Flash memory and trades-off between lithography processes and error-correcting codes to ensure the data integrity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 52, Issue 3, March 2012, Pages 525–529
Journal: Microelectronics Reliability - Volume 52, Issue 3, March 2012, Pages 525–529
نویسندگان
Pavel Poliakov, Pieter Blomme, Alessandro Vaglio Pret, Miguel Miranda Corbalan, Roel Gronheid, Diederik Verkest, Jan Van Houdt, Wim Dehaene,