کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5458016 | 1516163 | 2018 | 31 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the effect of β-Ga2O3 crystal orientation on wet etching and Ohmic contact formation. The photochemical etching rate in KOH solutions of (2¯01) oriented, n-type bulk single crystals grown by the edge-defined film-fed growth method is â¼3-4 times higher than for the (010) planes. The activation energy for etching was 0.498 eV and 0.424 eV for (2¯01) and (010) orientations, respectively, suggesting the etching is reaction-limited with the same rate-limiting step. Ti (200 Ã
)/Au (1500Â Ã
) metallization deposited on the two different orientations and annealed at 450 °C showed Ohmic current-voltage (I-V) behavior for (2¯01) but rectifying characteristics for (010). For (010) Ga2O3, there exists 2 types of surfaces having Ga and O atomic densities of 0.58 and 0.87 Ã 1015 cmâ2, respectively. By contrast, for (2¯01) Ga2O3 surfaces, there exist 2 types of surface, with each type terminated with only Ga or O. If the surface is terminated with O, the dangling bond densities of O are 1.78 and 2.68 Ã 1015 cmâ2, respectively. We found that (2¯01)-oriented Ga2O3 is etched at higher rates and is easier to form Ohmic contacts than (010) Ga2O3. The higher density of oxygen dangling bonds on the (2¯01) plane correlates with the faster etch rates and pronounced Ohmic behavior from deposited metals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 731, 15 January 2018, Pages 118-125
Journal: Journal of Alloys and Compounds - Volume 731, 15 January 2018, Pages 118-125
نویسندگان
Soohwan Jang, Sunwoo Jung, Kimberly Beers, Jiancheng Yang, Fan Ren, A. Kuramata, S.J. Pearton, Kwang Hyeon Baik,