ESD failure signature in capacitive RF MEMS switches

RF MEMS are commonly known as electrostatic devices using high electric field for their actuation. They can be exposed to transient voltages in any environment, and are very sensitive. According to this point of view, it is necessary to understand and analyze the degradations and failure criteria that can make them useless or reduce their lifetime. This paper deals with the investigation of ESD failure signature in capacitive RF MEMS. ESD experiments were carried out using a transmission line pulsing technique. It has been observed that electrical discharges give rise to sparks or electrical arcing and induced DC parameter shift, which can directly lead to changes in RF metrics. The contact-less dielectric charging effects of ESD pulses have been reported in this paper. It has been found that induced charges are predominant compared to injected ones through the trend of slope of the shift in the voltage corresponding to the minimum of capacitance.