کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5458031 | 1516163 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Series of GaN-based blue laser diodes (LDs) with different InxGa1-xN quantum barrier (QB) and lower waveguide (LWG) layers are investigated by using the two-dimension simulator LASTIP. It is found that a decrease slope efficiency is resulted when the indium content of InxGa1-xN quantum barrier (QB) layers is higher than about 1%, which is caused by the significantly increase of electron leakage current due to the piezoelectric polarization effect in high indium content InxGa1-xN last QB (LQB) layer. Therefore, an asymmetric MQW with a thin thickness of LQB is designed to lower the piezoelectric polarization effect and to reduce the electron leakage current. Meanwhile, a new LD structure with high InxGa1-xN LWG is also proposed to further reduce the optical loss. The two ways are useful to improve the slope efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 731, 15 January 2018, Pages 243-247
Journal: Journal of Alloys and Compounds - Volume 731, 15 January 2018, Pages 243-247
نویسندگان
Feng Liang, Degang Zhao, Desheng Jiang, Zongshun Liu, Jianjun Zhu, Ping Chen, Jing Yang, Wei Liu, Shuangtao Liu, Yao Xing, Liqun Zhang, Wenjie Wang, Mo Li, Yuantao Zhang, Guotong Du,