کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545807 | 1450556 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon based system in package: Improvement of passive integration process to avoid TBMS failure
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Because of its large dimension and its high level of integration, the PICS (Passive Integration Connecting Substrate) developed by NXP prone to top to bottom metal short (TBMS) failure during temperature cycling test. Several options of process modifications as well as new design rules and stress relief patterns for preventing TBMS failure are described. These countermeasures have been evaluated under high thermo-mechanical stress test. The results of these evaluations are also presented in this paper.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1258–1262
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1258–1262
نویسندگان
Christian Gautier, Sophie Ledain, Sébastien Jacqueline, Matthieu Nongaillard, Vincent Georgel, Karine Danilo,