کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545816 | 1450556 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The results presented in this paper are related to an experimental study that has the aim to evidence the formation of “latent gate oxide damages” in medium voltage power MOSFETs during the impact with energetic particles. The understanding of these “latent defectiveness” can be an helpful aid in the comprehension of the mechanisms of breach of the oxide layer of MOS structures induced by single energetic particles impact (single event gate rupture). To properly detect the presence of “latent damages” we have developed a high resolution experimental set-up and identified an appropriate region in which the device have to be biased in order to trigger this kind of damage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1306–1309
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1306–1309
نویسندگان
G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi,