کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545820 | 1450556 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120 nm and 65 nm technology
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Laser voltage probing (LVP) provides signal levels from circuit nodes through the backside of integrated circuits. Previous investigations presented voltage sweeping and modulation mapping, based on CW (continuous wave) 1319 nm laser. In this paper, large device structures have been compared with results of measurements on sub-micron devices – having nominal gate lengths and widths – including a ring oscillator (RO). All signals were obtained with a spectrum analyzer, requiring no internal trigger signals from the circuitry. On ROs, frequency shifts due to the thermal stimulation effect could be determined. Furthermore, a new measurement scheme for sign measurements of LVP signals is introduced.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1322–1326
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1322–1326
نویسندگان
Ulrike Kindereit, Christian Boit, Uwe Kerst, Steven Kasapi, Radu Ispasoiu, Roy Ng, William Lo,