Selective activation of failure mechanisms in packaged double-heterostructure light emitting diodes using controlled neutron energy irradiation

This paper demonstrates the feasibility of creating specific defects in double-heterostructure AlGaAsGaAs commercial light emitting diode by neutron irradiation. Using controlled neutron energy, only one failure mechanism can be activated. Defects are located in the side of the chip and increase the leakage current driven by the well-known Pool–Frenkel effect with Ec − ET = 130 meV electron trap energy level. The maximal amplitude of optical spectrum also reveals a drop about 20% associated to the rise of leakage current.