Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields

The electrical characterization, in DC and pulsed regime, and reliability analysis of T-gate high electron mobility transistors built on SiCopSiC and SopSiC composite substrates under high electric fields are here presented. The impact of different gate–drain overhang lengths on the electrical behavior of SiCopSiC devices is also investigated. We will demonstrate that devices can be efficiently realized over the proposed composite substrates, and that performances and robustness are comparable to devices processed on SiC or sapphire. The sensitivity to ESD-like events is also reported, using emission microscope for the failure analysis investigation.