کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545836 1450556 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Reliability study of TaON capacitors: From leakage current characterization to ESD robustness prediction
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Reliability study of TaON capacitors: From leakage current characterization to ESD robustness prediction
چکیده انگلیسی

Electrostatic discharges are a permanent threaten for integrated metal–insulator–metal capacitors. Hence, the development of comprehensive models able to predict the capacitors robustness against ESD aggression is of major importance to adopt the adequate protection strategies. This work focuses more particularly on the failure mechanisms of TaON capacitors submitted to HBM ESD waves. From leakage current characterization to thermal dissipation effects, we propose a complete reliability model which accurately foresees not only ESD failure voltage, but also TDDB capacitors lifetime.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1412–1416
نویسندگان
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