کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545842 1450556 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Testing semiconductor devices at extremely high operating temperatures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Testing semiconductor devices at extremely high operating temperatures
چکیده انگلیسی

We developed a dedicated measurement set-up for the electrical and electrothermal characterization of semiconductor devices and microsystems under very high-temperature conditions. The set-up consists of several modules comprising a vacuum system as basic unit and a number of alternative sample stages. Currently it enables measurements in the temperature range between room temperature and about 700 °C. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on SiC devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1440–1443
نویسندگان
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