Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications

As for railway traction applications, aeronautical power electronics implies high power density handling. Moreover typical aeronautical applications impose a harsh thermal environment. SiC technology has recently emerged for high power and high temperature application, but is not yet mature enough. Consequently it is still important to push the silicon devices temperature limits in order to increase the amount of switched power. Device ageing is accelerated and there exists the risk of catastrophic failure by thermal runaway. In order to design correctly high temperature power systems, knowing the IGBT characteristics at extended temperature ranges becomes essential. This paper describes an experimental setup and test procedure conceived to experiment with different available IGBT technologies at temperatures beyond the limits rated by manufacturers (−55 °C, +175 °C). The aim is to characterize the devices for a better understanding and optimized safe application. This will ease prototyping for future development of IGBT modules in aircraft.